Magnetization driven metal - insulator transition in strongly disordered Ge:Mn magnetic semiconductors

We report on the temperature and field driven metal-insulator transition in disordered Ge:Mn magnetic semiconductors accompanied by magnetic ordering, magnetoresistance reaching thousands of percents and suppression of the extraordinary Hall effect by a magnetic field. Magnetoresistance isotherms are shown to obey a universal scaling law with a single scaling parameter depending on temperature and fabrication. We argue that the strong magnetic disorder leads to localization of charge carriers and is the origin of the unusual properties of Ge:Mn alloys.Comment: 10 pages, 5 figure

Workspace topologies of industrial 3R manipulators

A mathematical analysis is used to characterize workspace topologies of industrial 3R manipulators. A level-set reconstruction of the workspace is formulated to identify characteristic points with fairly simple algebraic expressions. Thus, industrial 3R manipulators are classified as functions of workspace kinematic properties. Examples are illustrated to show practical usefulness of the proposed workspace characterization

Magneto-optical characterization of MnxGe1-x alloys obtained by ion implantation

Magneto-optical Kerr effect hysteresis loops at various wavelengths in the visible/near-infrared range have been used to characterize the magnetic properties of alloys obtained by implanting Mn ions at fixed energy in a Ge matrix. The details of the hysteresis loops reveal the presence of multiple magnetic contributions. They may be attributed to the inhomogeneous distribution of the magnetic atoms and, in particular, to the known coexistence of diluted Mn in the Ge matrix and metallic Mn-rich nanoparticles embedded in it [Phys. Rev. B 73, 195207(2006)].Comment: 2 pages, 2 figures. Proceeding of the International Conference on Magnetism. Kyoto, August 20-25 200

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(001) surface close to the onset of surface melting. A very diverse growth mode is obtained depending on the specific atomic structure and step density of nearby surface domains with different vicinal crystallographic orientations. On highly-miscut areas of the Ge(001) substrate, the critical thickness for islanding is lowered to about 5 ML, in contrast to the 11 ML reported for the flat Ge(001) surface, while on unreconstructed (1x1) domains the growth is Volmer-Weber driven. An explanation is proposed considering the diverse relative contributions of step and surface energies on misoriented substrates. In addition, we show that the bottom-up pattern of the substrate naturally formed by thermal annealing determines a spatial correlation for the dot sites

Experimental Analysis of Partial Evaporation Micro-ORC for low -temperature Heat Recovery

In this paper, we present an experimental assessment of the performance of a partial evaporating organic Rankine cycle (PE-ORC) power system. The system converts low temperature heat into electrical energy, with a power size around 1 kW, thus suitable for micro generation in the residential sector. Although the test bench was designed for operating with superheated vapour at the expander inlet, it has demonstrated to be able to work with the expansion occurring entirely in two-phase condition. Since the direct measurement of the vapour quality is not possible using the sensors installed in the test rig, the state of the fluid in the two-phase condition is estimated by means of the thermal balance at the heat exchangers, so the thermodynamic cycle can be evaluated. Temperatures of the heat source in the range between 40 C and 75 C have been tested, and for each temperature value the vapour quality at the expander inlet has been varied by regulating the feed -pump rotating speed. Experimental data are provided regarding the performance of the overall cycle, of the heat exchangers, of the expander and of the feed -pump. It was observed that the effectiveness of the evaporator and the efficiency of the pump are improved with respect to the operation with superheated vapour at the expander inlet. However, the overall performance is lower, especially due to the high ratio of the pump consumption over the expander produced power, commonly called back work ratio (BWR). The latter, under some boundary conditions, has resulted higher than the unit, meaning that the system is not able to produce net electrical power. The aim of the paper is to identify the design characteristics required by a micro -ORC energy system in order to enhance its performance in the PE operating mode

Prognostic significance of serine-phosphorylated STAT3 expression in pT1-T2 oral tongue carcinoma

Objectives. Phosphorylated (activated) STAT3 (pSTAT3) is a regulator of numerous genes that play an essential part in the onset, development and progression of cancer; it is involved in cell proliferation and preventing apoptosis, and in invasion, angiogenesis, and the evasion of immune surveillance. This study aimed mainly to investigate the potential prognostic role of pSTAT3 expression in oral tongue squamous cell carcinoma (SCC). Methods. Phospho-ser727 STAT3 immunolabeling was correlated with prognostic parameters in 34 consecutive cases of pT1\u2013T2 tongue SCCs undergoing primary surgery. Computer-based image analysis was used for the immunohistochemical reactions analysis. Results. Statistical analysis showed a difference in disease-free survival (DFS) when patients were stratified by pN status (P=0.031). Most tumors had variable degrees (mean\ub1SD, 80.7%\ub123.8%) of intense nuclear immunoreaction to pSTAT3. Our findings rule out any significant association of serine-phosphorylated nuclear STAT3 expression with tumor stage, grade, lymph node metastasis, recurrence rate, or DFS. Conclusion. In spite of these results, it is worth further investigating the role of pSTAT3 (serine-and tyrosine-pSTAT3) in oral tongue SCC in larger series because preclinical models are increasingly showing that several anticancer strategies would benefit from STAT3 phosphorylation inhibition

Workspace and Singularity analysis of a Delta like family robot

Workspace and joint space analysis are essential steps in describing the task and designing the control loop of the robot, respectively. This paper presents the descriptive analysis of a family of delta-like parallel robots by using algebraic tools to induce an estimation about the complexity in representing the singularities in the workspace and the joint space. A Gr{\"o}bner based elimination is used to compute the singularities of the manipulator and a Cylindrical Algebraic Decomposition algorithm is used to study the workspace and the joint space. From these algebraic objects, we propose some certified three dimensional plotting describing the the shape of workspace and of the joint space which will help the engineers or researchers to decide the most suited configuration of the manipulator they should use for a given task. Also, the different parameters associated with the complexity of the serial and parallel singularities are tabulated, which further enhance the selection of the different configuration of the manipulator by comparing the complexity of the singularity equations.Comment: 4th IFTOMM International Symposium on Robotics and Mechatronics, Jun 2015, Poitiers, France. 201

Shallow BF2 implants in Xe-bombardment-preamorphized Si: the interaction between Xe and F

Si(100) samples, preamorphized to a depth of ~30 nm using 20 keV Xe ions to a nominal fluence of 2×1014 cm-2 were implanted with 1 and 3 keV BF2 ions to fluences of 7×1014 cm-2. Following annealing over a range of temperatures (from 600 to 1130 °C) and times the implant redistribution was investigated using medium-energy ion scattering (MEIS), secondary ion mass spectrometry (SIMS), and energy filtered transmission electron microscopy (EFTEM). MEIS studies showed that for all annealing conditions leading to solid phase epitaxial regrowth, approximately half of the Xe had accumulated at depths of 7 nm for the 1 keV and at 13 nm for the 3 keV BF2 implant. These depths correspond to the end of range of the B and F within the amorphous Si. SIMS showed that in the preamorphized samples, approximately 10% of the F migrates into the bulk and is trapped at the same depths in a ~1:1 ratio to Xe. These observations indicate an interaction between the Xe and F implants and a damage structure that becomes a trapping site. A small fraction of the implanted B is also trapped at this depth. EXTEM micrographs suggest the development of Xe agglomerates at the depths determined by MEIS. The effect is interpreted in terms of the formation of a volume defect structure within the amorphized Si, leading to F stabilized Xe agglomerates or XeF precipitates